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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SK3408 is a switching device which can be driven directly by a 4-V power source. The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1 -0.05 0.16+0.1 -0.06
0.65-0.15
+0.1
2.8 0.2
3
1.5
0 to 0.1
1 2
FEATURES
* Can be driven by a 4-V power source * Low on-state resistance RDS(on)1 = 195 m MAX. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 250 m MAX. (VGS = 4.5 V, ID = 0.5 A) RDS(on)3 = 260 m MAX. (VGS = 4.0 V, ID = 0.5 A) * Built-in G-S protection diode against ESD.
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
PART NUMBER 2SK3408 PACKAGE SC-96 Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Drain to Gate Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VDGS VGSS ID(DC) ID(pulse) PT1
Note2
435 435 20 1.0 4.0 0.2 1.25 150 -55 to +150
V V V A A W W C C
Gate
Body Diode
Gate Protection Diode Marking: XF
Source
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 Board, t 5 sec. Remark
PT2 Tch Tstg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15016EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
2000
2SK3408
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 30.4 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.5 A VGS = 4.0 V, ID = 0.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 20 V ID = 0.5 A VGS(on) = 10 V RG = 10 VDS = 30.4 V ID = 1.0 A VGS = 10 V IF = 1.0 A, VGS = 0 V IF = 1.0 A, VGS = 0 V di/dt = 100 A / s 1.5 1 2.0 2.0 155 185 195 230 50 30 18 14 115 38 4.0 1.0 1.0 0.81 25 16 195 250 260 MIN. TYP. MAX. 10 10 2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
0
10%
VGS(on)
90%
D.U.T. IG = 2 mA 50 RL VDD
90% 90%
PG.
ID
0 10% 10%
td(on) ton
tr td(off)
toff
tf
2
Data Sheet D15016EJ3V0DS
2SK3408
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Derating Factor - %
5
10
FORWARD BIAS SAFE OPERATING AREA
80
ID - Drain Current - A
1
RV (@
(o DS GS
d ite V) Lim10 n) =
ID (pulse)
PW
10 m s
=1
ID (DC)
m s
60
10 0m s
5s
40
0.1
Single Pulse Mounted on 250 mm2 x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board
20
0 0
30
60
90
120
150
0.01 0.1
1
10
100
TA - Ambient Temperature - C
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 VGS =10 V 4.5 V 4.0 V
10 1 0.1 0.01 0.001
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
3
ID - Drain Current - A
2
TA = 125C 75C 25C
-25C
1
0.0001
0
0.00001
VDS = 10 V
0 1 2 3 4
0
0.2
0.4
0.6
0.8
1
VDS - Drain to Source Voltage - V
VGS - Gate to Sorce Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1 mA
| yfs | - Forward Transfer Admittance - S
2.5
10
2
1 TA = -25C 25C 75C 125C
1.5
0.1
1 -50
0
50
100
150
0.01 0.01
0.1
1
VDS = 10 V 10
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet D15016EJ3V0DS
3
2SK3408
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 VGS = 10 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 VGS = 4.5 V
TA = 125C
300
TA = 125C 75C
300
75C
200
25C
200
25C
-25C 100
-25C 100
0 0.01
0.1
1
10
0 0.01
0.1
1
10
ID - Drain Current - A
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 VGS = 4.0 V
TA = 125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 400 ID = 0.5 A 300 VGS = 4.0 V 4.5 V 10 V 200
300
75C
200
25C
-25C
100
100
0 0.01
0.1
1
10
0 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature -C
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
500 400
1000
f = 1 MHz VGS = 0V Ciss
100 Coss Crss 10
300
200 100
0 0 5 10
ID = 1.0 A
15 20
1 0.1
1
10
100
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet D15016EJ3V0DS
2SK3408
SWITCHING CHARACTERISTICS 1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10
IF - Source to Drain Current - A
td(on), tr, td(off), tf - Swwitchig Time - ns
td(off) 100 tf
tr
1
td(on) 10 VDD = 20V VGS(on) = 10V RG = 10 1 ID - Drain Current - A 10
0.1
1
0.1
0.01 0.4
Pulsed VGS = 0 V 0.6 0.8 1.0 1.2
VF(S-D) - Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS 12
VGS - Gate to Source Voltage - V
ID = 1.0 A 10 8 6 4 2 0 VDD = 32 V 20 V 8V
0
1
2
3
4
5
Qg - Gate Charge - nC
5
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - C/W
Single Pulse
Without Board
100
Mounted on 250 mm2 x 35 m Copper Pad Connected to Drain Electrode in 2500 mm2 x 1.6 mm FR-4 Board
10
1 0.001
0.01
0.1
1 PW - Pulse Width - S
10
100
1000
Data Sheet D15016EJ3V0DS
5
2SK3408
DYNAMIC CLAMP APPLICATION
Relay
Load Rin Microcomputer RGS
Remarks
1. Input resistance is necessary to Gate terminal. (Range ; 1k to 10k, Recommend ; 3k) 2. Pull down resistance is necessary between Gate to Source. (Several 10k)
6
Data Sheet D15016EJ3V0DS
2SK3408
[MEMO]
Data Sheet D15016EJ3V0DS
7
2SK3408
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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